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| LED - Chip Preliminary Radiation Yellow Type Standard 10.04.2007 Technology AlInGaP/GaAs EL-590-13 rev. 03/06 Electrodes P (anode) up 265 110 typ. dimensions (m) typ. thickness 260 (20) m cathode gold alloy, 0.5 m anode gold alloy, 1.5 m Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power1 Radiant power2 Luminous intensity1 Luminous intensity2 Peak wavelength Dominant wavelength Spectral bandwidth at 50% Switching time 1 2 Symbol Min Typ Max Unit IF = 20 mA IR = 10 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA VF VR e e IV IV P D 0.5 tr, tf 592 75 5 0.5 2.0 2.3 V V 0.7 1.4 110 200 595 592 17 30 598 mW mW mcd mcd nm nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type EL-590-13 Lot N V(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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